国家/地区 Usa（2）
关键词
出版物
出版时间
机构 PENN STATE UNIV（2）
作者 AHN CH（2）

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O-3

APPLIED PHYSICS LETTERS

HONG X, HOFFMAN J, POSADAS A, ZOU K, AHN CH, ZHU J

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

PHYSICAL REVIEW LETTERS

HONG X, POSADAS A, ZOU K, AHN CH, ZHU J