国家/地区 France（4）
关键词 DOPING（2） RAMAN SPECTROSCOPY（2）
出版物
出版时间
机构 UNIV PARIS 0.（3）
作者 ALVAREZ J（5）

Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

APPLIED PHYSICS LETTERS

BOUTCHICH M, AREZKI H, ALAMARGUY D, HO KI, SEDIRI H, GUNES F, ALVAREZ J, KLEIDER JP, LAI CS, OUERGHI A

FDTD Modeling of Graphene Devices Using Complex Conjugate Dispersion Material Model

IEEE MICROWAVE WIRELESS COMPONENTS LETTERS

LIN H, PANTOJA MF, ANGULO LD, ALVAREZ J, MARTIN RG, GARCIA SG

Nanostructures in suspended mono-and bilayer epitaxial graphene

CARBON

CHASTE J, SAADANI A, JAFFRE A, MADOURI A, ALVAREZ J, PIERUCCI D, BEN AZIZA Z, OUERGHI A

Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

JOURNAL OF PHYSICSCONDENSED MATTER

AREZKI H, BOUTCHICH M, ALAMARGUY D, MADOURI A, ALVAREZ J, CABARROCAS PRI, KLEIDER JP, YAO F, LEE YH

Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid

NANOTECHNOLOGY

GUNES F, AREZKI H, PIERUCCI D, ALAMARGUY D, ALVAREZ J, KLEIDER JP, DAPPE YJ, OUERGHI A, BOUTCHICH M