国家/地区 Usa（3）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间
机构 UNIV FLORIDA（3）
作者 AN YB（3）

Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions

APPLIED PHYSICS LETTERS

AN YB, BEHNAM A, POP E, URAL A

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

APPLIED PHYSICS LETTERS

AN YB, SHEKHAWAT A, BEHNAM A, POP E, URAL A

Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

JOURNAL OF APPLIED PHYSICS

AN YB, BEHNAM A, POP E, BOSMAN G, URAL A