国家/地区 China（7）
关键词 GRAPHENE（3） DISPLACEMENT CURREN.（2） GRAPHENE CHANNEL CU.（2）
SILICON（2） TEMPERATURE DEPENDE.（2）
出版物
出版时间 2023（3） 2022（2）
机构
作者 ANWAR MA（7）

Temperature dependent characteristics of graphene/silicon Schottky junction

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

ANWAR MA, DONG SR, WONG H

Graphene Channel Electron-Multiplying Charge-Coupled Pixel

IEEE ACCESS

ALI M, KHALIQ A, ANWAR MA, LV JH, MALIK M, FENG T, BODEPUDI SC, GUO HW, SHEHZAD K, LI ZW, DONG YF, LIU W, HU H, ZHAO YD, YU B, XU Y

Graphene-Silicon Diode for 2-D Heterostructure Electrical Failure Protection

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ANWAR MA, ALI M, PU D, BODEPUDI SC, LV JH, SHEHZAD K, WANG XC, IMRAN A, ZHAO Y, DONG SR, HU H, YU B, XU Y

Graphene Field-Effect-Coupled Detection of Avalanche Multiplication in Silicon

IEEE TRANSACTIONS ON ELECTRON DEVICES

ALI M, ANWAR MA, LV JH, BODEPUDI SC, GUO HW, SHEHZAD K, DONG YF, LIU W, WANG XC, IMRAN A, HU H, ZHAO YD, YU B, XU Y

Effects of silicon surface defects on the graphene/silicon Schottky characteristics

RESULTS IN PHYSICS

WONG H, ANWAR MA, DONG SR

Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation

APPLIED PHYSICS LETTERS

PU D, ANWAR MA, ZHOU JC, MAO RW, PAN X, CHAI J, TIAN F, WANG H, HU H, XU Y

In-Situ Monitoring of Reciprocal Charge Transfer and Losses in Graphene-Silicon CCD Pixels

SENSORS

ALI M, DONG YF, LV JH, GUO HW, ANWAR MA, TIAN F, SHAHZAD K, LIU W, YU B, BODEPUDI SC, XU Y