国家/地区 Japan（4）
关键词
出版物 NANOSCALE（2）
出版时间 2014（2）
机构 NATL INST MA.（3）
作者 APARECIDOFERREIRA A（4）

Semiconducting properties of bilayer graphene modulated by an electric field for next-generation atomic-film electronics

JOURNAL OF PHYSICS DAPPLIED PHYSICS

TSUKAGOSHI K, LI SL, MIYAZAKI H, APARECIDOFERREIRA A, NAKAHARAI S

Barrier inhomogeneities at vertically stacked graphene-based heterostructures

NANOSCALE

LIN YF, LI WW, LI SL, XU Y, APARECIDOFERREIRA A, KOMATSU K, SUN HB, NAKAHARAI S, TSUKAGOSHI K

Realization of graphene field-effect transistor with high-kappa HCa2Nb3O10 nanoflake as top-gate dielectric

APPLIED PHYSICS LETTERS

LI WW, LI SL, KOMATSU K, APARECIDOFERREIRA A, LIN YF, XU Y, OSADA M, SASAKI T, TSUKAGOSHI K

Enhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgap

NANOSCALE

APARECIDOFERREIRA A, MIYAZAKI H, LI SL, KOMATSU K, NAKAHARAI S, TSUKAGOSHI K