国家/地区 Sweden（2）
关键词 LOGIC GATE（2）
出版物
出版时间
机构
作者 ASAD M（2）

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Mobility Degradation and Series Resistance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JEPPSON K, ASAD M, STAKE J