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出版物
出版时间 2020（2）
机构
作者 ASAD M（2）

Does carrier velocity saturation help to enhance f(max) in graphene field-effect transistors?

NANOSCALE ADVANCES

FEIJOO PC, PASADAS F, BONMANN M, ASAD M, YANG XN, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J, JIMENEZ D

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J