国家/地区 Usa（3）
关键词
出版物 JOURNAL OF APPLIED .（2）
出版时间 2016（3）
机构 UNIV TEXAS A.（3）
作者 BANERJEE SK（3）

DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs

JOURNAL OF APPLIED PHYSICS

VALSARAJ A, REGISTER LF, TUTUC E, BANERJEE SK

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors

NANO LETTERS

KANG S, PRASAD N, MOVVA HCP, RAI A, KIM K, MOU XH, TANIGUCHI T, WATANABE K, REGISTER LF, TUTUC E, BANERJEE SK

Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors

JOURNAL OF APPLIED PHYSICS

KANG S, MOVVA HCP, SANNE A, RAI A, BANERJEE SK