国家/地区 England（5）
关键词 EELS（6）
出版物 ACS NANO（3） NANO LETTERS（2）
出版时间 2013（2） 2015（2）
机构 SUPERSTEM LA.（4）
作者 BANGERT U（6）

Local Plasmon Engineering in Doped Graphene

ACS NANO

HAGE FS, HARDCASTLE TP, GJERDING MN, KEPAPTSOGLOU DM, SEABOURNE CR, WINTHER KT, ZAN R, AMANI JA, HOFSAESS HC, BANGERT U, THYGESEN KS, RAMASSE QM

Ion Implantation of Graphene-Toward IC Compatible Technologies

NANO LETTERS

BANGERT U, PIERCE W, KEPAPTSOGLOU DM, RAMASSE Q, ZAN R, GASS MH, VAN DEN BERG JA, BOOTHROYD CB, AMANI J, HOFSASS H

Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy

NANO LETTERS

RAMASSE QM, SEABOURNE CR, KEPAPTSOGLOU DM, ZAN R, BANGERT U, SCOTT AJ

Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene

ACS NANO

RAMASSE QM, ZAN R, BANGERT U, BOUKHVALOV DW, SON YW, NOVOSELOV KS

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

ACS NANO

KEPAPTSOGLOU D, HARDCASTLE TP, SEABOURNE CR, BANGERT U, ZAN R, AMANI JA, HOFSASS H, NICHOLLS RJ, BRYDSON RMD, SCOTT AJ, RAMASSE QM

Electronic functionalisation of graphene via external doping and dosing

INTERNATIONAL MATERIALS REVIEWS

BANGERT U, ZAN R