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出版物 ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY（2）
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作者 BAYANI A（2）

Boron Nitride-Graphene (BN-G) Bilayer as a Channel of Graphene Based Field Effect Transistor

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

VALI M, MOEZI N, BAYANI A

A Scheme of Quantum Tunnel Field Effect Transistor Based on Armchair Graphene Nano-Ribbon

ECS JOURNAL OF SOLID STATE SCIENCE TECHNOLOGY

VALI M, MOEZI N, HEIDARI H, BAYANI A