国家/地区 Italy（13）
关键词 GRAPHENE（4） ELECTROCHEMISTRY（3）
出版物 PHYSICAL REVIEW B（3）
出版时间 2011（3） 2014（3） 2012（2）
机构 CNR（6） UNIV PAVIA（4）
作者 BELLANI V（13）

Dispersion Stability and Surface Morphology Study of Electrochemically Exfoliated Bilayer Graphene Oxide

JOURNAL OF PHYSICAL CHEMISTRY C

XIA ZY, MACCAFERRI G, ZANARDI C, CHRISTIAN M, ORTOLANI L, MORANDI V, BELLANI V, KOVTUN A, DELL ELCE S, CANDINI A, LISCIO A, PALERMO V

Percolation transitions in bilayer graphene encapsulated by hexagonal boron nitride

PHYSICAL REVIEW B

COBALEDA C, PEZZINI S, RODRIGUEZ A, DIEZ E, BELLANI V

Critical point for the canted antiferromagnetic to ferromagnetic phase transition at charge neutrality in bilayer graphene

PHYSICAL REVIEW B

PEZZINI S, COBALEDA C, PIOT BA, BELLANI V, DIEZ E

Synergic Exfoliation of Graphene with Organic Molecules and Inorganic Ions for the Electrochemical Production of Flexible Electrodes

CHEMPLUSCHEM

XIA ZY, GIAMBASTIANI G, CHRISTODOULOU C, NARDI MV, KOCH N, TREOSSI E, BELLANI V, PEZZINI S, CORTICELLI F, MORANDI V, ZANELLI A, PALERMO V

The Exfoliation of Graphene in Liquids by Electrochemical, Chemical, and Sonication-Assisted Techniques: A Nanoscale Study

ADVANCED FUNCTIONAL MATERIALS

XIA ZY, PEZZINI S, TREOSSI E, GIAMBASTIANI G, CORTICELLI F, MORANDI V, ZANELLI A, BELLANI V, PALERMO V

Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

JOURNAL OF PHYSICSCONDENSED MATTER

AMADO M, DIEZ E, ROSSELLA F, BELLANI V, LOPEZROMERO D, MAUDE DK

Quantum interference corrections to magnetoconductivity in graphene

PHYSICAL REVIEW B

PEZZINI S, COBALEDA C, DIEZ E, BELLANI V

Quantum hall effect in inhomogeneous trilayer graphene

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

COBALEDA C, ROSSELLA F, PEZZINI S, DIEZ E, BELLANI V, MAUDE D, BLAKE P

Automated detection and characterization of graphene and few-layer graphite via Raman spectroscopy

JOURNAL OF RAMAN SPECTROSCOPY

CARIDAD JM, ROSSELLA F, BELLANI V, GRANDI MS, DIEZ E

Charge transport in graphene-polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

JOURNAL OF MATERIALS CHEMISTRY

LISCIO A, VERONESE GP, TREOSSI E, SURIANO F, ROSSELLA F, BELLANI V, RIZZOLI R, SAMORI P, PALERMO V