国家/地区
关键词
出版物 NEW JOURNAL OF PHYSICS（2）
出版时间 2012（2）
机构
作者 BERGER C（2）

Electronic structure of epitaxial graphene grown on the C-face of SiC and its relation to the structure

NEW JOURNAL OF PHYSICS

TEJEDA A, TALEBIBRAHIMI A, DE HEER W, BERGER C, CONRAD EH

Current relaxation due to hot carrier scattering in graphene

NEW JOURNAL OF PHYSICS

SUN D, DIVIN C, MIHNEV M, WINZER T, MALIC E, KNORR A, SIPE JE, BERGER C, DE HEER WA, FIRST PN, NORRIS TB