国家/地区 India（9）
关键词 GRAPHENE（3） SENSOR（2）
出版物 PHYSICAL REVIEW LET.（2）
出版时间 2015（3） 2014（2） 2021（2） 2022（2）
机构 INDIAN INST .（5）
作者 BID A（10）

A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region

IEEE TRANSACTIONS ON ELECTRON DEVICES

BHATTACHARYA S, SAHA D, BID A, MAHAPATRA S

Graphene as a sensor

CURRENT SCIENCE

AMIN KR, BID A

Crumpled sheets of reduced graphene oxide as a highly sensitive, robust and versatile strain/pressure sensor

NANOSCALE

KUNDU S, SRIRAMDAS R, AMIN KR, BID A, PRATAP R, RAVISHANKAR N

Role of different scattering mechanisms on the temperature dependence of transport in graphene

SCIENTIFIC REPORTS

SARKAR S, AMIN KR, MODAK R, SINGH A, MUKERJEE S, BID A

High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors

ACS APPLIED MATERIALS INTERFACES

AMIN KR, BID A

Effect of ambient on the resistance fluctuations of graphene

APPLIED PHYSICS LETTERS

AMIN KR, BID A

Observation of Time-Reversal Invariant Helical Edge-Modes in Bilayer Graphene/WSe2 Heterostructure

ACS NANO

TIWARI P, SRIVASTAV SK, RAY S, DAS T, BID A

Multifractal Conductance Fluctuations in High-Mobility Graphene in the Integer Quantum Hall Regime

PHYSICAL REVIEW LETTERS

AMIN KR, NAGARAJAN R, PANDIT R, BID A

Experimental observation of spin-split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures

NPJ 2D MATERIALS APPLICATIONS

TIWARI P, JAT MK, UDUPA A, NARANG DS, WATANABE K, TANIGUCHI T, SEN D, BID A

Electric-Field-Tunable Valley Zeeman Effect in Bilayer Graphene Heterostructures: Realization of the Spin-Orbit Valve Effect

PHYSICAL REVIEW LETTERS

TIWARI P, SRIVASTAV SK, BID A