国家/地区
关键词
出版物
出版时间 2014（2）
机构
作者 BOCQUET FC（2）

Achieving High-Quality Single-Atom Nitrogen Doping of Graphene/SiC(0001) by Ion Implantation and Subsequent Thermal Stabilization

ACS NANO

TELYCHKO M, MUTOMBO P, ONDRACEK M, HAPALA P, BOCQUET FC, KOLORENC J, VONDRACEK M, JELINEK P, SVEC M

Deuterium adsorption on (and desorption from) SiC(0001)-(3 x 3), (root 3 x root 3) R30 degrees, (6 root 3 x 6 root 3) R30 degrees and quasi-free-standing graphene obtained by hydrogen intercalation

JOURNAL OF PHYSICS DAPPLIED PHYSICS

BOCQUET FC, BISSON R, THEMLIN JM, LAYET JM, ANGOT T