国家/地区 Usa（4） Sweden（2）
关键词
出版物 APPLIED PHYSICS LET.（4）
出版时间 2012（2） 2013（2）
机构 LINKOPING UN.（2） UNIV NEBRASK.（2）
作者 BOOSALIS A（6）

Morphological and electronic properties of epitaxial graphene on SiC

PHYSICA BCONDENSED MATTER

YAKIMOVA R, IAKIMOV T, YAZDI GR, BOUHAFS C, ERIKSSON J, ZAKHAROV A, BOOSALIS A, SCHUBERT M, DARAKCHIEVA V

Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

APPLIED PHYSICS LETTERS

DARAKCHIEVA V, BOOSALIS A, ZAKHAROV AA, HOFMANN T, SCHUBERT M, TIWALD TE, IAKIMOV T, VASILIAUSKAS R, YAKIMOVA R

Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide

APPLIED PHYSICS LETTERS

YAN RS, ZHANG Q, KIRILLOV OA, LI W, BASHAM J, BOOSALIS A, LIANG XL, JENA D, RICHTER CA, SEABAUGH AC, GUNDLACH DJ, XING HLG, NGUYEN NV

Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry

APPLIED PHYSICS LETTERS

BOOSALIS A, HOFMANN T, DARAKCHIEVA V, YAKIMOVA R, SCHUBERT M

Direct graphene growth on Co3O4(111) by molecular beam epitaxy

JOURNAL OF PHYSICSCONDENSED MATTER

ZHOU M, PASQUALE FL, DOWBEN PA, BOOSALIS A, SCHUBERT M, DARAKCHIEVA V, YAKIMOVA R, KONG LM, KELBER JA

Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

APPLIED PHYSICS LETTERS

HOFMANN T, BOOSALIS A, KUHNE P, HERZINGER CM, WOOLLAM JA, GASKILL DK, TEDESCO JL, SCHUBERT M