国家/地区 Usa（3）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2013（2）
机构 UNIV NEBRASK.（2）
作者 BOOSALIS A（4）

Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC(111)

APPLIED PHYSICS LETTERS

DARAKCHIEVA V, BOOSALIS A, ZAKHAROV AA, HOFMANN T, SCHUBERT M, TIWALD TE, IAKIMOV T, VASILIAUSKAS R, YAKIMOVA R

Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide

APPLIED PHYSICS LETTERS

YAN RS, ZHANG Q, KIRILLOV OA, LI W, BASHAM J, BOOSALIS A, LIANG XL, JENA D, RICHTER CA, SEABAUGH AC, GUNDLACH DJ, XING HLG, NGUYEN NV

Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry

APPLIED PHYSICS LETTERS

BOOSALIS A, HOFMANN T, DARAKCHIEVA V, YAKIMOVA R, SCHUBERT M

Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

APPLIED PHYSICS LETTERS

HOFMANN T, BOOSALIS A, KUHNE P, HERZINGER CM, WOOLLAM JA, GASKILL DK, TEDESCO JL, SCHUBERT M