国家/地区 France（6）
关键词 DOPING（2）
出版物
出版时间 2015（3）
机构 UNIV PARIS 0.（4）
作者 BOUTCHICH M（6）

Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

APPLIED PHYSICS LETTERS

BOUTCHICH M, AREZKI H, ALAMARGUY D, HO KI, SEDIRI H, GUNES F, ALVAREZ J, KLEIDER JP, LAI CS, OUERGHI A

Ultrafast electron dynamics in twisted graphene by femtosecond photoemission electron microscopy

CARBON

FUKUMOTO K, BOUTCHICH M, AREZKI H, SAKURAI K, DI FELICE D, DAPPE YJ, ONDA K, KOSHIHARA S

Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

JOURNAL OF PHYSICSCONDENSED MATTER

AREZKI H, BOUTCHICH M, ALAMARGUY D, MADOURI A, ALVAREZ J, CABARROCAS PRI, KLEIDER JP, YAO F, LEE YH

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

SCIENTIFIC REPORTS

SEDIRI H, PIERUCCI D, HAJLAOUI M, HENCK H, PATRIARCHE G, DAPPE YJ, YUAN S, TOURY B, BELKHOU R, SILLY MG, SIROTTI F, BOUTCHICH M, OUERGHI A

Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid

NANOTECHNOLOGY

GUNES F, AREZKI H, PIERUCCI D, ALAMARGUY D, ALVAREZ J, KLEIDER JP, DAPPE YJ, OUERGHI A, BOUTCHICH M

A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

ADVANCED MATERIALS

HO KI, BOUTCHICH M, SU CY, MOREDDU R, MARIANATHAN ESR, MONTES L, LAI CS