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机构 CHINESE ACAD SCI（2）
作者 CAO RR（2）

Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices

NANOSCALE ADVANCES

WU ZH, ZHAO XL, YANG Y, WANG W, ZHANG XM, WANG R, CAO RR, LIU Q, BANERJEE W

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

ADVANCED MATERIALS

ZHAO XL, MA J, XIAO XH, LIU Q, SHAO L, CHEN D, LIU S, NIU JB, ZHANG XM, WANG Y, CAO RR, WANG W, DI ZF, LV HB, LONG SB, LIU M