国家/地区 India（2）
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作者 CHAKRABORTY N（2）

Perforated Turbostratic Graphene As Active Layer in a Nonvolatile Resistive Switching Memory Device

ACS APPLIED ELECTRONIC MATERIALS

CHAKRABORTY N, GHOSH J, GOSWAMI S, SHAW A, DAS B, MALLIK A, CHATTOPADHYAY KK

PEDOT:PSS-Doped Graphene Oxide as an Alternative to Hole Transport Material and Transparent Conducting Electrode

NANO

CHAKRABORTY N, SHARMA R, SINGH RK, MUKHERJEE SK, SHARMA N