国家/地区 Singapore（3）
关键词
出版物
出版时间 2010（3）
机构 NATL UNIV SI.（2）
作者 CHIN SK（3）

Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHIN SK, SEAH D, LAM KT, SAMUDRA GS, LIANG G

A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel

IEEE ELECTRON DEVICE LETTERS

LAM KT, SEAH D, CHIN SK, KUMAR SB, SAMUDRA G, YEO YC, LIANG G

Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

LAM KT, CHIN SK, SEAH DW, KUMAR SB, LIANG GC