国家/地区
关键词
出版物
出版时间 2012（4）
机构
作者 CRESTI A（4）

Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

ACS NANO

MARCONCINI P, CRESTI A, TRIOZON F, FIORI G, BIEL B, NIQUET YM, MACUCCI M, ROCHE S

Single-particle probing of edge-state formation in a graphene nanoribbon

PHYSICAL REVIEW B

CHIU KL, CONNOLLY MR, CRESTI A, CHUA C, CHORLEY SJ, SFIGAKIS F, MILANA S, FERRARI AC, GRIFFITHS JP, JONES GAC, SMITH CG

Quenching of the Quantum Hall Effect in Graphene with Scrolled Edges

PHYSICAL REVIEW LETTERS

CRESTI A, FOGLER MM, GUINEA F, CASTRO NETO AH, ROCHE S

Chemically enriched graphene-based switching devices: A novel principle driven by impurity-induced quasibound states and quantum coherence

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

ROCHE S, BIEL B, CRESTI A, TRIOZON F