国家/地区 Vietnam（14）
关键词 GRAPHENE（4） PLASMON（2）
出版物 JOURNAL OF APPLIED .（4） PHYSICAL REVIEW B（4）
出版时间 2010（3） 2014（2） 2019（2） 2023（2）
机构 HUST（3） HANOI ADV SC.（2） HANOI UNIV T.（2） PHENIKAA UNI.（2）
作者 DO VN（14）

Electronic properties of slid bilayer graphene: effective models in low energy range

EUROPEAN PHYSICAL JOURNAL B

HO ST, LE HA, NGUYEN VD, DO VN

Time-evolution patterns of electrons in twisted bilayer graphene

PHYSICAL REVIEW B

DO VN, LE HA, BERCIOUX D

Theoretical Considerations on the Optimal Performance of Sub-100 Nanometer Top-Gated Graphene Field-Effect Transistors

JOURNAL OF ELECTRONIC MATERIALS

DO VN, LE HA, VU VT

Electronic structure and optical properties of twisted bilayer graphene calculated via time evolution of states in real space

PHYSICAL REVIEW B

LE HA, DO VN

Anomalous confined electron states in graphene superlattices

APPLIED PHYSICS LETTERS

LE HA, NGUYEN DC, DO VN

Effects of temperature, doping and anisotropy of energy surfaces on behaviors of plasmons in graphene

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

HO ST, LE HA, LE T, NGUYEN DC, DO VN

Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures (vol 106, 023719, 2009)

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Modeling of metal-graphene coupling and its influence on transport properties in graphene at the charge neutrality point

JOURNAL OF PHYSICSCONDENSED MATTER

DO VN, DOLLFUS P

Negative differential resistance in zigzag-edge graphene nanoribbon junctions

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P