国家/地区 Vietnam（5）
关键词
出版物 JOURNAL OF APPLIED .（3）
出版时间 2010（3）
机构 HANOI ADV SC.（2） HANOI UNIV T.（2）
作者 DOLLFUS P（5）

Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures (vol 106, 023719, 2009)

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Modeling of metal-graphene coupling and its influence on transport properties in graphene at the charge neutrality point

JOURNAL OF PHYSICSCONDENSED MATTER

DO VN, DOLLFUS P

Negative differential resistance in zigzag-edge graphene nanoribbon junctions

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Effects of charged impurities and lattice defects on transport properties of nanoscale graphene structures

JOURNAL OF APPLIED PHYSICS

DO VN, DOLLFUS P

Transport properties through graphene grain boundaries: strain effects versus lattice symmetry

NANOSCALE

NGUYEN VH, HOANG TX, DOLLFUS P, CHARLIER JC