国家/地区 Iran（3）
关键词 NONEQUILIBRIUM GREEN S FUNCTION NEGF（3）
出版物
出版时间
机构 ISLAMIC AZAD.（3）
作者 FAEZ R（3）

Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS2 Heterostructure

IEEE TRANSACTIONS ON ELECTRON DEVICES

HORRI A, FAEZ R, POURFATH M, DARVISH G

Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect

SUPERLATTICES MICROSTRUCTURES

NAZARI A, FAEZ R, SHAMLOO H

A novel graphene nanoribbon field effect transistor with two different gate insulators

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

ESHKALAK MA, FAEZ R, HAJINASIRI S