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机构 SHANGHAI UNIV（2）
作者 FONIN M（2）

Quantum Well States for Graphene Spin-Texture Engineering

JOURNAL OF PHYSICAL CHEMISTRY LETTERS

VINCENT T, VOLOSHINA E, PONS S, SIMON S, FONIN M, WANG KL, PAULUS B, RODITCHEV D, DEDKOV Y, VLAIC S

The graphene/n-Ge(110) interface: structure, doping, and electronic properties

NANOSCALE

TESCH J, PASCHKE F, FONIN M, WIETSTRUK M, BOTTCHER S, KOCH RJ, BOSTWICK A, JOZWIAK C, ROTENBERG E, MAKAROVA A, PAULUS B, VOLOSHINA E, DEDKOV Y