国家/地区
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2013（2）
机构
作者 FROMM F（4）

Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

APPLIED PHYSICS LETTERS

TADICH A, EDMONDS MT, LEY L, FROMM F, SMETS Y, MAZEJ Z, RILEY J, PAKES CI, SEYLLER T, WANKE M

Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach

APPLIED PHYSICS LETTERS

BARRETO L, PERKINS E, JOHANNSEN J, ULSTRUP S, FROMM F, RAIDEL C, SEYLLER T, HOFMANN P

Precise control of epitaxy of graphene by microfabricating SiC substrate

APPLIED PHYSICS LETTERS

FUKIDOME H, KAWAI Y, FROMM F, KOTSUGI M, HANDA H, IDE T, OHKOUCHI T, MIYASHITA H, ENTA Y, KINOSHITA T, SEYLLER T, SUEMITSU M

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

APPLIED PHYSICS LETTERS

SPECK F, JOBST J, FROMM F, OSTLER M, WALDMANN D, HUNDHAUSEN M, WEBER HB, SEYLLER T