国家/地区 Singapore（3）
关键词
出版物 ADVANCED MATERIALS（2）
出版时间
机构 SINGAPORE UN.（2）
作者 GENG DC（3）

Graphene-Induced in Situ Growth of Monolayer and Bilayer 2D SiC Crystals Toward High-Temperature Electronics

ACS APPLIED MATERIALS INTERFACES

GENG DC, HU JP, FU W, ANG LK, YANG HY

Recent Advances in Growth of Novel 2D Materials: Beyond Graphene and Transition Metal Dichalcogenides

ADVANCED MATERIALS

GENG DC, YANG HY

Direct Synthesis of Large-Area 2D Mo2C on In Situ Grown Graphene

ADVANCED MATERIALS

GENG DC, ZHAO XX, CHEN ZX, SUN WW, FU W, CHEN JY, LIU W, ZHOU W, LOH KP