国家/地区 China（2） Korea（2）
关键词 LIQUID CU（2）
出版物
出版时间 2019（5）
机构 SINGAPORE UN.（2）
作者 GENG DC（5）

Graphene-Induced in Situ Growth of Monolayer and Bilayer 2D SiC Crystals Toward High-Temperature Electronics

ACS APPLIED MATERIALS INTERFACES

GENG DC, HU JP, FU W, ANG LK, YANG HY

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

NPG ASIA MATERIALS

GENG DC, DONG JC, ANG LK, DING F, YANG HY

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

WANG HP, XUE XD, JIANG QQ, WANG YL, GENG DC, CAI L, WANG LP, XU ZP, YU G

Formation of Twinned Graphene Polycrystals

ANGEWANDTE CHEMIEINTERNATIONAL EDITION

DONG JC, GENG DC, LIU FN, DING F

Pattern evolution characterizes the mechanism and efficiency of CVD graphene growth

CARBON

HE WZ, GENG DC, XU ZP