国家/地区 Iran（3）
关键词
出版物
出版时间 2014（2）
机构 UNIV TEHRAN（3）
作者 GHOBADI N（3）

On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors

JOURNAL OF APPLIED PHYSICS

GHOBADI N, POURFATH M

A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures

IEEE TRANSACTIONS ON ELECTRON DEVICES

GHOBADI N, POURFATH M

Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

CURRENT APPLIED PHYSICS

GHOBADI N, ABDI Y