国家/地区 Usa（3）
关键词
出版物
出版时间 2013（4）
机构 STANFORD UNI.（3）
作者 GOLDHABERGORDON D（4）

Insulating Behavior at the Neutrality Point in Single-Layer Graphene

PHYSICAL REVIEW LETTERS

AMET F, WILLIAMS JR, WATANABE K, TANIGUCHI T, GOLDHABERGORDON D

Effective Cleaning of Hexagonal Boron Nitride for Graphene Devices (vol 12, pg 4449, 2012)

NANO LETTERS

GARCIA AGF, NEUMANN M, AMET F, WILLIAMS JR, WATANABE K, TANIGUCHI T, GOLDHABERGORDON D

Scanning gate microscopy of localized states in wide graphene constrictions

PHYSICAL REVIEW B

GARCIA AGF, KOENIG M, GOLDHABERGORDON D, TODD K

Extreme Mono layer-Selectivity of Hydrogen-Plasma Reactions with Graphene

ACS NANO

DIANKOV G, NEUMANN M, GOLDHABERGORDON D