国家/地区 England（4） Austria（2）
关键词 GRAPHENE（3） DENSITY FUNCTIONAL .（2） DFT（2）
DOPING（2） EELS（2） ELECTRON ENERGY LOS.（2）
STEM（2）
出版物 ACS NANO（2）
出版时间 2017（3）
机构 SUPERSTEM LA.（3）
作者 HARDCASTLE TP（6）

Local Plasmon Engineering in Doped Graphene

ACS NANO

HAGE FS, HARDCASTLE TP, GJERDING MN, KEPAPTSOGLOU DM, SEABOURNE CR, WINTHER KT, ZAN R, AMANI JA, HOFSAESS HC, BANGERT U, THYGESEN KS, RAMASSE QM

Mobile metal adatoms on single layer, bilayer, and trilayer graphene: An ab initio DFT study with van der Waals corrections correlated with electron microscopy data

PHYSICAL REVIEW B

HARDCASTLE TP, SEABOURNE CR, ZAN R, BRYDSON RMD, BANGERT U, RAMASSE QM, NOVOSELOV KS, SCOTT AJ

Structure and electronic states of a graphene double vacancy with an embedded Si dopant

JOURNAL OF CHEMICAL PHYSICS

NIEMAN R, AQUINO AJA, HARDCASTLE TP, KOTAKOSKI J, SUSI T, LISCHKA H

Robust theoretical modelling of core ionisation edges for quantitative electron energy loss spectroscopy of B- and N-doped graphene

JOURNAL OF PHYSICSCONDENSED MATTER

HARDCASTLE TP, SEABOURNE CR, KEPAPTSOGLOU DM, SUSI T, NICHOLLS RJ, BRYDSON RMD, SCOTT AJ, RAMASSE QM

Single-atom spectroscopy of phosphorus dopants implanted into graphene

2D MATERIALS

SUSI T, HARDCASTLE TP, HOFSASS H, MITTELBERGER A, PENNYCOOK TJ, MANGLER C, DRUMMONDBRYDSON R, SCOTT AJ, MEYER JC, KOTAKOSKI J

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping

ACS NANO

KEPAPTSOGLOU D, HARDCASTLE TP, SEABOURNE CR, BANGERT U, ZAN R, AMANI JA, HOFSASS H, NICHOLLS RJ, BRYDSON RMD, SCOTT AJ, RAMASSE QM