国家/地区
关键词
出版物
出版时间 2014（2）
机构
作者 HSU A（2）

A Current-Voltage Model for Graphene Electrolyte-Gated Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

MACKIN C, HESS LH, HSU A, SONG Y, KONG J, GARRIDO JA, PALACIOS T

Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates

APPLIED PHYSICS EXPRESS

ARAKI T, UCHIMURA S, SAKAGUCHI J, NANISHI Y, FUJISHIMA T, HSU A, KIM KK, PALACIOS T, PESQUERA A, CENTENO A, ZURUTUZA A