| 国家/地区 |
China(3)
|
| 关键词 | |
| 出版物 | |
| 出版时间 |
2016(3)
|
| 机构 | SHANGHAI JIA.(2) |
| 作者 |
HU GX(3)
|
Quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors
JAPANESE JOURNAL OF APPLIED PHYSICS
HU SY, HU GX, WANG LL, LIU R, ZHENG LR
INDUSTRIAL ENGINEERING CHEMISTRY RESEARCH
YI LX, HU GX, LI H
RSC ADVANCES
GAO HY, HU GX
