国家/地区 Germany（2）
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作者 IANNAZZO M（2）

Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors

ANNALEN DER PHYSIK

PANDEY H, AGUIRREMORALES JD, KATARIA S, FREGONESE S, PASSI V, IANNAZZO M, ZIMMER T, ALARCON E, LEMME MC

Author's Reply to "Comments on 'Optimization of a Compact I-V Model for Graphene FETs: Extending Parameter Scalability for Circuit Design Exploration' " S. Fregonese and T. Zimmer

IEEE TRANSACTIONS ON ELECTRON DEVICES

IANNAZZO M, LEMME MC, ALARCON E