国家/地区 China（2）
关键词 FERMI LEVEL（3）
出版物
出版时间
机构
作者 JIN Z（3）

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?

ADVANCED ELECTRONIC MATERIALS

PENG SA, JIN Z, ZHANG DY, SHI JY, NIU JB, HUANG XN, YAO Y, ZHANG YH, YU GH

Terahertz and Infrared Spectroscopy of Gated Large-Area Graphene

NANO LETTERS

REN L, ZHANG Q, YAO J, SUN ZZ, KANEKO R, YAN Z, NANOT S, JIN Z, KAWAYAMA I, TONOUCHI M, TOUR JM, KONO J

The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor

ADVANCED ENGINEERING MATERIALS

PENG OG, JIN Z, ZHANG DY, SHI JY, NIU JB, ZHU CY, ZHANG YH, YU GH