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出版物 APPLIED PHYSICS LETTERS（2）
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作者 JOUAULT B（2）

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

APPLIED PHYSICS LETTERS

JOUAULT B, CAMARA N, JABAKHANJI B, CABONI A, CONSEJO C, GODIGNON P, MAUDE DK, CAMASSEL J

Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

APPLIED PHYSICS LETTERS

CAMARA N, JOUAULT B, CABONI A, JABAKHANJI B, DESRAT W, PAUSAS E, CONSEJO C, MESTRES N, GODIGNON P, CAMASSEL J