国家/地区 Korea（2）
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出版时间
机构 SUNGKYUNKWAN UNIV SKKU（2）
作者 JUNG JH（2）

Reduced graphene oxide field-effect transistor with indium tin oxide extended gate for proton sensing

CURRENT APPLIED PHYSICS

TRUONG TK, NGUYEN TNT, TRUNG TQ, SOHN IY, KIM DJ, JUNG JH, LEE NE

High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

ADVANCED MATERIALS

TRUNG TQ, TIEN NT, KIM D, JUNG JH, YOON OJ, LEE NE