国家/地区 Japan（3）
关键词
出版物
出版时间 2011（3）
机构 KWANSEI GAKU.（2）
作者 KANEKO T（3）

4H-SiC(0001) Basal Plane Stability during the Growth of Epitaxial Graphene on Inverted-Mesa Structures

JAPANESE JOURNAL OF APPLIED PHYSICS

USHIO S, KUTSUMA Y, YOSHII A, TAMAI N, OHTANI N, KANEKO T

First-principles study of Ti intercalation between graphene and Au surface

APPLIED PHYSICS LETTERS

KANEKO T, IMAMURA H

Wide-range temperature dependence of epitaxial graphene growth on 4H-SiC (0 0 0-1): A study of ridge structures formation dynamics associated with temperature

JOURNAL OF CRYSTAL GROWTH

USHIO S, YOSHII A, TAMAI N, OHTANI N, KANEKO T