国家/地区 Malaysia（5）
关键词
出版物 JOURNAL OF NANOMATE.（3）
出版时间 2013（5）
机构 UNIV TEKNOL .（3）
作者 KARIMI H（5）

Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

SEMICONDUCTOR SCIENCE TECHNOLOGY

SAEIDMANESH M, ISMAIL R, KHALEDIAN M, KARIMI H, AKBARI E

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

MICROELECTRONICS RELIABILITY

GHADIRY M, NADI M, BAHADORIAN M, MANAF AABD, KARIMI H, SADEGHI H

Capacitance Variation of Electrolyte-Gated Bilayer Graphene Based Transistors

JOURNAL OF NANOMATERIALS

KARIMI H, YUSOF R, AHMADI MT, SAEIDMANESH M, RAHMANI M, AKBARI E, KIAT AK

An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors

JOURNAL OF NANOMATERIALS

SAEIDMANESH M, KIANI MJ, SIEW KE, AKBARI E, KARIMI H, ISMAIL R

Optimization of DNA Sensor Model Based Nanostructured Graphene Using Particle Swarm Optimization Technique

JOURNAL OF NANOMATERIALS

KARIMI H, YUSOF R, RAHMANI R, AHMADI MT