国家/地区 Korea（2） Usa（2）
关键词
出版物
出版时间 2014（4）
机构
作者 KIM DJ（4）

Transition of gas sensing behavior in non-reduced graphene oxides with thermal annealing

MATERIALS LETTERS

PARK H, AHN H, CHUNG Y, CHO SB, YOON YS, KIM DJ

Effect of annealing of graphene layer on electrical transport and degradation of Au/graphene/n-type silicon Schottky diodes

JOURNAL OF ALLOYS COMPOUNDS

KIM DJ, KIM GS, PARK NW, LEE WY, SIM Y, KIM KS, SEONG MJ, KOH JH, HONG CH, LEE SK

Ferroelectric tunnel junctions with graphene electrodes

NATURE COMMUNICATIONS

LU H, LIPATOV A, RYU S, KIM DJ, LEE H, ZHURAVLEV MY, EOM CB, TSYMBAL EY, SINITSKII A, GRUVERMAN A

Reduced graphene oxide field-effect transistor with indium tin oxide extended gate for proton sensing

CURRENT APPLIED PHYSICS

TRUONG TK, NGUYEN TNT, TRUNG TQ, SOHN IY, KIM DJ, JUNG JH, LEE NE