国家/地区 Usa（12）
关键词 GRAPHENE（6） QUANTUM HALL（2）
出版物 APPLIED PHYSICS LET.（3） NANO LETTERS（2） PHYSICAL REVIEW B（2）
PHYSICAL REVIEW LET.（2）
出版时间 2011（4） 2012（4） 2010（2）
机构 UNIV TEXAS AUSTIN（12）
作者 KIM S（12）

Coulomb drag and magnetotransport in graphene double layers

SOLID STATE COMMUNICATIONS

KIM S, TUTUC E

Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition

PHYSICAL REVIEW B

FALLAHAZAD B, HAO YF, LEE K, KIM S, RUOFF RS, TUTUC E

Direct Measurement of the Fermi Energy in Graphene Using a Double-Layer Heterostructure

PHYSICAL REVIEW LETTERS

KIM S, JO I, DILLEN DC, FERRER DA, FALLAHAZAD B, YAO Z, BANERJEE SK, TUTUC E

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E

Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

NANO LETTERS

LEE K, KIM S, POINTS MS, BEECHEM TE, OHTA T, TUTUC E

Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at nu=0 in High Magnetic Fields

PHYSICAL REVIEW LETTERS

KIM S, LEE K, TUTUC E

Coulomb drag of massless fermions in graphene

PHYSICAL REVIEW B

KIM S, JO I, NAH J, YAO Z, BANERJEE SK, TUTUC E

Low-Frequency Acoustic Phonon Temperature Distribution in Electrically Biased Graphene

NANO LETTERS

JO I, HSU IK, LEE YJ, SADEGHI MM, KIM S, CRONIN S, TUTUC E, BANERJEE SK, YAO Z, SHI L

Graphene for CMOS and Beyond CMOS Applications

PROCEEDINGS OF THE IEEE

BANERJEE SK, REGISTER LF, TUTUC E, BASU D, KIM S, REDDY D, MACDONALD AH

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E