国家/地区 China（2） Korea（2）
关键词 FLEXIBLE（4）
出版物
出版时间
机构 HANYANG UNIV（3）
作者 KIM TW（4）

Effect of a PEDOT:PSS modified layer on the electrical characteristics of flexible memristive devices based on graphene oxide: polyvinylpyrrolidone nanocomposites

APPLIED SURFACE SCIENCE

KIM WK, WU C, KIM TW

Flexible Organic Bistable Devices Based on Graphene Embedded in an Insulating Poly(methyl methacrylate) Polymer Layer

NANO LETTERS

SON DI, KIM TW, SHIM JH, JUNG JH, LEE DU, LEE JM, IL PARK W, CHOI WK

Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

IEEE ELECTRON DEVICE LETTERS

LIN J, OOI PC, LI FS, GUO TL, KIM TW