国家/地区 China（2）
关键词 FLEXIBLE（2）
出版物
出版时间
机构
作者 KIM TW（2）

Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

ORGANIC ELECTRONICS

OOI PC, LIN J, KIM TW, LI FS

Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

IEEE ELECTRON DEVICE LETTERS

LIN J, OOI PC, LI FS, GUO TL, KIM TW