国家/地区 France（3）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2014（3）
机构
作者 LAFONT F（3）

Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition

PHYSICAL REVIEW B

LAFONT F, RIBEIROPALAU R, HAN Z, CRESTI A, DELVALLEE A, CUMMINGS AW, ROCHE S, BOUCHIAT V, DUCOURTIEUX S, SCHOPFER F, POIRIER W

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

SCIENTIFIC REPORTS

PALLECCHI E, LAFONT F, CAVALIERE V, SCHOPFER F, MAILLY D, POIRIER W, OUERGHI A

Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing

PHYSICAL REVIEW B

JABAKHANJI B, MICHON A, CONSEJO C, DESRAT W, PORTAIL M, TIBERJ A, PAILLET M, ZAHAB A, CHEYNIS F, LAFONT F, SCHOPFER F, POIRIER W, BERTRAN F, LE FEVRE P, TALEBIBRAHIMI A, KAZAZIS D, ESCOFFIER W, CAMARGO BC, KOPELEVICH Y, CAMASSEL J, JOUAULT B