国家/地区 France（2）
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机构 UNIV PARIS 0.（2）
作者 LAI CS（2）

Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate

APPLIED PHYSICS LETTERS

BOUTCHICH M, AREZKI H, ALAMARGUY D, HO KI, SEDIRI H, GUNES F, ALVAREZ J, KLEIDER JP, LAI CS, OUERGHI A

A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

ADVANCED MATERIALS

HO KI, BOUTCHICH M, SU CY, MOREDDU R, MARIANATHAN ESR, MONTES L, LAI CS