国家/地区 Singapore（2）
关键词
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（2）
出版时间
机构
作者 LAM KT（2）

Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel

IEEE TRANSACTIONS ON ELECTRON DEVICES

DA HX, LAM KT, SAMUDRA G, CHIN SK, LIANG GC

Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHIN SK, SEAH D, LAM KT, SAMUDRA GS, LIANG G