国家/地区 Singapore（2）
关键词
出版物 JAPANESE JOURNAL OF APPLIED PHYSICS（2）
出版时间
机构 NATL UNIV SINGAPORE（2）
作者 LAM KT（2）

Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

LAM KT, CHIN SK, SEAH DW, KUMAR SB, LIANG GC

A Computational Study on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes

JAPANESE JOURNAL OF APPLIED PHYSICS

TEONG HS, LAM KT, LIANG GC