国家/地区 Korea（2） Usa（2）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2019（2）
机构
作者 LEE GH（4）

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

APPLIED PHYSICS LETTERS

SEO D, LEE DY, KWON J, LEE JJ, TANIGUCHI T, WATANABE K, LEE GH, KIM KS, HONE J, KIM YD, CHOI HJ

Impact of geometry and non-idealities on electron "optics" based graphene p-n junction devices

APPLIED PHYSICS LETTERS

ELAHI MM, HABIB KMM, WANG K, LEE GH, KIM P, GHOSH AW

Electrically integrated SU-8 clamped graphene drum resonators for strain engineering

APPLIED PHYSICS LETTERS

LEE S, CHEN CY, DESHPANDE VV, LEE GH, LEE I, LEKAS M, GONDARENKO A, YU YJ, SHEPARD K, KIM P, HONE J

Mapping current profiles of point-contacted graphene devices using single-spin scanning magnetometer

APPLIED PHYSICS LETTERS

LEE M, JANG S, JUNG W, LEE Y, TANIGUCHI T, WATANABE K, KIM HR, PARK HG, LEE GH, LEE D