国家/地区 Korea（3）
关键词
出版物 APPLIED PHYSICS LETTERS（3）
出版时间 2011（3）
机构 KOREA UNIV（2）
作者 LEE JH（3）

Graphene arch gate SiO2 shell silicon nanowire core field effect transistors

APPLIED PHYSICS LETTERS

JIN JE, LEE JH, HWANG DH, KIM DW, KIM MJ, SON KS, WHANG D, HWANG SW

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

APPLIED PHYSICS LETTERS

LEE JK, CHUNG HJ, HEO J, SEO S, CHO IH, KWON HI, LEE JH

Vertical conduction behavior through atomic graphene device under transverse electric field

APPLIED PHYSICS LETTERS

LEE YH, KIM YJ, LEE JH