国家/地区 Germany（2）
关键词
出版物
出版时间 2010（2）
机构
作者 LEY L（2）

Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

JOURNAL OF PHYSICS DAPPLIED PHYSICS

RISTEIN J, ZHANG WY, SPECK F, OSTLER M, LEY L, SEYLLER T

Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

WEINGART S, BOCK C, KUNZE U, EMTSEV KV, SEYLLER T, LEY L